• Part: KDV358
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 360.05 KB
Download KDV358 Datasheet PDF
KDV358 page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. Features Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : USC. (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K B 1 2 D MM 1. ANODE 2. CATHODE DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 Marking Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25...