• Part: KDV350F
  • Description: Silicon Diode
  • Manufacturer: KEC
  • Size: 352.99 KB
Download KDV350F Datasheet PDF
KDV350F page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. Features High Capacitance Ratio : C1V/C4V=2.8 (Min.) Low Series Resistance. : rS=0.5 (max.) Good C-V linearity. VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05 0.40 MAX 0.13+_ 0.05 Marking Type Name TFSC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance...