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KDV358F - SILICON EPITAXIAL PLANAR DIODE

Key Features

  • Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : TFSC. (Max. ) KDV358F.

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Datasheet Details

Part number KDV358F
Manufacturer KEC
File Size 353.60 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDV358F Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES Good C-V Linearity. Low Series Resistance. : rS=0.4 Small Package : TFSC. (Max.) KDV358F VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 CE DF MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 15 150 -55 150 UNIT V B A 1. ANODE 2. CATHODE DIM A B C D E F MILLIMETERS 1.00+_ 0.05 0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05 0.40 MAX 0.13+_ 0.05 Marking Type Name TFSC G ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR1 IR2 Capacitance C1V C4V Capacitance Ratio C1V/C4V Series Resistance rS TEST CONDITION VR=15V VR=15V, Ta=60 VR=1V, f=1MHz VR=4V, f=1MHz VR=1V, f=470MHz MIN. - 19.