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KDV300E - Silicon Diode

Key Features

  • High Capacitance Ratio : C2V/C25V=14.5(Min. ) Low Series Resistance : rs=1.1 (Max. ) Small Package : ESC.

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Datasheet Details

Part number KDV300E
Manufacturer KEC
File Size 358.66 KB
Description Silicon Diode
Datasheet download datasheet KDV300E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA TV Tuning. FEATURES High Capacitance Ratio : C2V/C25V=14.5(Min.) Low Series Resistance : rs=1.1 (Max.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 32 150 -55 150 UNIT V KDV300E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.