The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES High Capacitance Ratio Low Series Resistance
KDV302E
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
C 1
E
CATHODE MARK B A
GG
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 32 125
-55 125
UNIT V
2 D
1. ANODE 2. CATHODE
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.
KDV302E Datasheet
