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KEC

KDV368F Datasheet Preview

KDV368F Datasheet

SILICON EPITAXIAL PLANAR DIODE

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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
Good C-V Linearity.
Low Series Resistance. : rS=1.1
Small Package : TFSC.
(Max.)
KDV368F
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
21
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
10
150
-55 150
UNIT
V
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
1.00+_ 0.05
0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
Marking
Type Name
TFSC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
IR1
IR2
C1V
Capacitance
C2V
C3V
Capacitance Ratio
C1V/C3V
Series Resistance
rS
TEST CONDITION
VR=10V
VR=10V, Ta=60
VR=1V, f=1MHz
VR=2V, f=1MHz
VR=3V, f=1MHz
-
VR=2V, f=470MHz
MIN.
-
-
15
9.0
5.0
2.2
-
TYP.
-
-
-
-
-
-
-
MAX.
10
100
16.5
10.2
6.0
-
1.1
UNIT
nA
pF
-
2004. 8. 9
Revision No : 0
1/2




KEC

KDV368F Datasheet Preview

KDV368F Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

KDV368F
-12
10
IR - VR
-13
10
-14
10
0
5 10
REVERSE VOLTAGE VR (V)
15
25
20
15
10
5
0
10 -1
C T - VR
f=1MHz
1.0
REVERSE VOLTAGE VR (V)
10
1.2
1.0
0.8
0.6
0.4
0.2
0
-1
10
r s - VR
f=470MHz
1.0
REVERSE VOLTAGE VR (V)
10
(LOG CT) / (LOG VR) - VR
0
-0.5
-1.0
-1.5
-2.0
-1
10
1.0
REVERSE VOLTAGE VR (V)
10
2004. 8. 9
Revision No : 0
2/2


Part Number KDV368F
Description SILICON EPITAXIAL PLANAR DIODE
Maker KEC
Total Page 2 Pages
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