KF4N20LD transistor equivalent, n-channel mos field effect transistor.
VDSS(Min.)= 200V, ID= 3.6A Drain-Source ON Resistance : RDS(ON)=1.15 Qg(typ.) =2.9nC Vth(Max.)= 2V (max) @VGS =10V
H G F F
KF4N20LD/I
N CHANNEL MOS FIELD EFFECT TRANSIST.
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