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KEC

KF4N20LW Datasheet Preview

KF4N20LW Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
FEATURES
VDSS(Min.)= 200V, ID= 1A
Drain-Source ON Resistance : RDS(ON)=1.05
Qg(typ.) =2.9nC
Vth(Max.)= 2V
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
VDSS
200
Gate-Source Voltage
VGSS
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TA=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
1*
0.6*
4*
52
0.2
5.5
2.2*
0.018
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-
Ambient
RthJA
57*
* : Surface Mounted on FR4 Board (40mm 40mm, 1.0t)
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
PIN CONNECTION
KF4N20LW
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
2010. 8. 18
Revision No : 0
1/6




KEC

KF4N20LW Datasheet Preview

KF4N20LW Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KF4N20LW
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=200V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 20V, VDS=0V
RDS(ON)
VGS=10V, ID=0.5A
VGS=5V, ID=0.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=150V, ID=3.6A
VGS=5V
(Note4,5)
VDD=100V, ID=3.6A
RG=25
VGS=5V
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
IS
VGS<Vth
ISP
Diode Forward Voltage
VSD IS=1A, VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
trr IS=3.6A, VGS=0V,
Qrr dIs/dt=100A/
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, IS=1A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 2A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
MIN. TYP. MAX. UNIT
200 - - V
- 0.2 - V/
- - 10 A
1.0 - 2.0 V
- - 100 nA
- 0.85 1.05
0.89 1.10
- 2.9 3.8
- 0.6 - nC
- 2.2 -
- 10 -
- 20 -
ns
- 15 -
- 15 -
- 170 220
- 25 - pF
- 4.0 -
- -1
A
- -4
- - 1.4 V
- 100 -
ns
- 0.30 -
C
KF4N20LW
2010. 8. 18
Revision No : 0
2/6



Part Number KF4N20LW
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
Total Page 6 Pages
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KF4N20LW Datasheet PDF





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