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KF4N80F - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ. )= 17nC @VGS=10V D N N H 1 2 3 1. GATE 2. DRAIN 3. SOURCE Q A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + K TO-220IS (1).

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Datasheet preview – KF4N80F

Datasheet Details

Part number KF4N80F
Manufacturer KEC semiconductor
File Size 382.76 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF4N80F Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description A KF4N80F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. O B E G DIM MILLIMETERS L M J R FEATURES VDSS=800V, ID=4A Drain-Source ON Resistance : RDS(ON)(Max)=2.6 Qg(typ.)= 17nC @VGS=10V D N N H 1 2 3 1. GATE 2. DRAIN 3. SOURCE Q A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.
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