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KEC
KEC

KMA2D3P20S Datasheet Preview

KMA2D3P20S Datasheet

P-Ch Trench MOSFET

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KMA2D3P20S pdf
SEMICONDUCTOR
TECHNICAL DATA
Genewrwawl .DDaetsacSrhiepett4ioUn.com
It s mainly suitable for use as a load switch in battery powered applications.
FEATURES
VDSS=-20V, ID=-2.3A.
Drain-Source ON Resistance.
: RDS(ON)=130m (Max.) @ VGS=-4.5V.
: RDS(ON)=190m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC
Pulsed (Note1)
Source-Drain Diode Current
Drain Power Dissipation Ta=25
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
VDSS
VGSS
ID *
IDP*
IS *
PD *
Tj
Tstg
RthJA *
-20
10
-2.3
-8
-1.25
1.25
150
-55 150
100
V
V
A
A
W
/W
* : Surface Mounted on 1 1 FR4 Board
KMA2D3P20S
P-Ch Trench MOSFET
E
B
2
3
1
M
DIM
A
B
C
D
E
G
H
J
K
M
N
MILLIMETERS
2.93+_ 0.1
1.63+_ 0.1
1.25 MAX
0.40+0.1/-0.05
2.80+_ 0.15
1.9+_ 0.1
0.95+_ 0.1
0.15+0.1/-0.05
0.00 ~ 0.15
0.45+_ 0.08
1.10+_ 0.1
SOT-23W
SH1
PIN CONNECTION (TOP VIEW)
D
3
3
21
GS
21
2007. 5. 30
Revision No : 2
1/5



KEC
KEC

KMA2D3P20S Datasheet Preview

KMA2D3P20S Datasheet

P-Ch Trench MOSFET

No Preview Available !

KMA2D3P20S pdf
KMA2D3P20S
ELECwTwRw.IDCaAtaSLhCeeHt4AU.RcoAmCTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
BVDSS
IDSS
ID=-250 A, VGS=0V,
VGS=0V, VDS=-16V
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
ON State Drain Current
Forward Transconductance
IGSS
Vth
RDS(ON)
ID(ON)
gfs
VGS= 10V, VDS=0V
VDS=VGS, ID=-250 A
VGS=-4.5V, ID=-2.3A
VGS=-2.5V, ID=-1.0A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-2.3A
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Source-Drain Diode Forward Voltage
Dynamic (Note 2)
VSD VGS=0V, IS=-1.25A (Note 1)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Trancefer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
VDS=-10V, ID=-2.3A
VGS=-4.5V
VDS=-10V, ID=-1A
VGS=-4.5V, RG=6
VDS=-20V, VGS=0V
f = 1.0MHz
(Fig.1)
(Fig.2)
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%.
Note 2) Guaranteed by design. Not subject to production testing.
MIN. TYP. MAX. UNIT
-20 - - V
- - -1 A
- - 100 nA
-0.5 -0.8 -1.5
V
- 115 130
m
- 175 190
-5 - - A
-6-S
- -0.85 -1.2 V
- 3.2 -
- 0.7 -
- 0.8 -
- 9.8 -
- 10.8 -
- 79.1 -
- 41.3 -
- 290 -
- 60 -
- 45 -
nC
ns
pF
2007. 5. 30
Revision No : 2
2/5


Part Number KMA2D3P20S
Description P-Ch Trench MOSFET
Maker KEC
Total Page 5 Pages
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KMA2D3P20S pdf
KMA2D3P20S Datasheet PDF
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