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KMA3D0N20SA - N-Channel MOSFET

Datasheet Summary

Description

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for portable equipment.

Features

  • hVDSS=20V, ID=3A hDrain to Source on-state Resistance RDS(ON)=55mʃ(Max. ) @ VGS=4.5V RDS(ON)=110mʃ(Max. ) @ VGS=2.5V hSuper Hige Dense Cell Design KMA3D0N20SA N-Ch Trench MOSFET E L BL DIM.

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Datasheet preview – KMA3D0N20SA

Datasheet Details

Part number KMA3D0N20SA
Manufacturer KEC
File Size 755.05 KB
Description N-Channel MOSFET
Datasheet download datasheet KMA3D0N20SA Datasheet
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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment. FEATURES hVDSS=20V, ID=3A hDrain to Source on-state Resistance RDS(ON)=55mʃ(Max.) @ VGS=4.5V RDS(ON)=110mʃ(Max.) @ VGS=2.5V hSuper Hige Dense Cell Design KMA3D0N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 2 3 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q P P L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P 7 Q 0.
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