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KMA2D3P20S - P-Ch Trench MOSFET

General Description

It s mainly suitable for use as a load switch in battery powered applications.

Key Features

  • VDSS=-20V, ID=-2.3A. Drain-Source ON Resistance. A 2 3 G H 1 D : RDS(ON)=130m (Max. ) @ VGS=-4.5V. : RDS(ON)=190m (Max. ) @ VGS=-2.5V. DIM A B C D E G H J K M N.

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Datasheet Details

Part number KMA2D3P20S
Manufacturer KEC
File Size 507.20 KB
Description P-Ch Trench MOSFET
Datasheet download datasheet KMA2D3P20S Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA2D3P20S P-Ch Trench MOSFET It s mainly suitable for use as a load switch in battery powered applications. E B FEATURES VDSS=-20V, ID=-2.3A. Drain-Source ON Resistance. A 2 3 G H 1 D : RDS(ON)=130m (Max.) @ VGS=-4.5V. : RDS(ON)=190m (Max.) @ VGS=-2.5V. DIM A B C D E G H J K M N MILLIMETERS _ 0.1 2.93 + _ 0.1 1.63 + 1.25 MAX 0.40+0.1/-0.05 _ 0.15 2.80 + _ 0.1 1.9 + _ 0.1 0.95 + 0.15+0.1/-0.05 0.00 ~ 0.15 _ 0.08 0.45 + _ 0.1 1.10 + C N MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL RATING VDSS VGSS ID * IDP* IS * -20 10 -2.3 A -8 -1.25 1.