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SEMICONDUCTOR
TECHNICAL DATA
General Description
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KMA2D3P20S
P-Ch Trench MOSFET
It s mainly suitable for use as a load switch in battery powered applications.
E B
FEATURES
VDSS=-20V, ID=-2.3A. Drain-Source ON Resistance.
A 2 3 G H 1 D
: RDS(ON)=130m (Max.) @ VGS=-4.5V. : RDS(ON)=190m (Max.) @ VGS=-2.5V.
DIM A B C D E G H J K M N
MILLIMETERS _ 0.1 2.93 + _ 0.1 1.63 + 1.25 MAX 0.40+0.1/-0.05 _ 0.15 2.80 + _ 0.1 1.9 + _ 0.1 0.95 + 0.15+0.1/-0.05 0.00 ~ 0.15 _ 0.08 0.45 + _ 0.1 1.10 +
C
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current
)
SYMBOL RATING VDSS VGSS ID * IDP* IS * -20 10 -2.3 A -8 -1.25 1.