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KMA2D4P20S - P-Ch Trench MOSFET

General Description

It’s mainly suitable for use as a load switch in battery powered applications.

Key Features

  • VDSS=-20V, ID=-2.4A. Drain-Source ON Resistance. : RDS(ON)=100m (Max. ) @ VGS=-4.5V. A 2 E B 3 : RDS(ON)=175m (Max. ) @ VGS=-2.5V. 1 DIM.

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Datasheet Details

Part number KMA2D4P20S
Manufacturer KEC
File Size 450.99 KB
Description P-Ch Trench MOSFET
Datasheet download datasheet KMA2D4P20S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA2D4P20S P-Ch Trench MOSFET It’s mainly suitable for use as a load switch in battery powered applications. FEATURES VDSS=-20V, ID=-2.4A. Drain-Source ON Resistance. : RDS(ON)=100m (Max.) @ VGS=-4.5V. A 2 E B 3 : RDS(ON)=175m (Max.) @ VGS=-2.5V. 1 DIM MILLIMETERS _ 0.05 A 2.926 + _ 0.05 B 1.626 + 1.25 MAX C _ 0.05 D 0.40 + _ 0.15 E 2.80 + _ 0.10 G 1.90 + _ 0.05 H 0.95 + _ 0.05 J 0.15 + 0.00 ~ 0.10 K _ 0.08 M 0.45 + _ 0.05 N 1.10 + G C N H M MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC ) SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 -2.4 -9 -0.9 1.0 0.