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KMA010P20Q - P-Ch Trench MOSFET

General Description

It s mainly suitable for battery pack or power management in cell phone, and PDA.

Key Features

  • VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max. ) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max. ) @ VGS=-2.5V, ID=-7.6A. A D P G H T L 8 5 B1 B2 1 4 DIM A B1 B2 D G H L P T.

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Datasheet Details

Part number KMA010P20Q
Manufacturer KEC
File Size 783.31 KB
Description P-Ch Trench MOSFET
Datasheet download datasheet KMA010P20Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA General Description www.DataSheet4U.com KMA010P20Q P-Ch Trench MOSFET It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A. A D P G H T L 8 5 B1 B2 1 4 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current ) SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 10 48 -2.3 1.6 W 0.