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SEMICONDUCTOR
TECHNICAL DATA
General Description
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KMA010P20Q
P-Ch Trench MOSFET
It s mainly suitable for battery pack or power management in cell phone, and PDA. FEATURES
VDSS=-20V, ID=-10A. Drain-Source ON Resistance. : RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A. : RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A.
A D P G H T L
8
5 B1 B2
1
4
DIM A B1 B2 D G H L P T
MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage DC Drain Current
)
SYMBOL VDSS VGSS ID * IDP* IS * PD * Tj Tstg RthJA * RATING -20 12 10 48 -2.3 1.6 W 0.