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KTK5162S Datasheet Preview

KTK5162S Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

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SEMICONDUCTOR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
DC Drain Current
Drain Power Dissipation
Channel Temperature
VDS
VGSS
ID
PD
Tch
Storage Temperature Range
Tstg
RATING
60
20
100
200
150
-55 150
UNIT
V
V
mA
mW
KTK5162S
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
1. SOURCE
2. GATE
3. DRAIN
SOT-23
EQUIVALENT CIRCUIT
D
G
Marking
KFType Name
Lot No.
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Gate Leakage Current
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Threshold Voltage
Forward Transfer Admittance
Drain-Source ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time
Turn-on Time
Turn-off Time
IGSS
V(BR)DSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Crss
Coss
ton
toff
TEST CONDITION
VGS= 16V, VDS=0V
ID=100 A, VGS=0V
VDS=60V, VGS=0V
VDS=10V, ID=0.1mA
VDS=10V, ID=50mA
ID=50mA, VGS=10V
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDD=25V, ID=50mA, VGS=0 10V
MIN.
-
60
-
1
100
-
-
-
-
-
-
TYP.
-
-
-
-
-
3
6.2
1.5
4.4
0.021
0.18
MAX.
1
-
1
2.4
-
7.5
-
-
-
-
-
UNIT
A
V
A
V
mS
pF
pF
pF
S
S
2009. 2. 10
Revision No : 1
1/3




KEC

KTK5162S Datasheet Preview

KTK5162S Datasheet

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

No Preview Available !

KTK5162S
2009. 2. 10
Revision No : 1
2/3


Part Number KTK5162S
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Maker KEC
PDF Download

KTK5162S Datasheet PDF






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