Datasheet4U Logo Datasheet4U.com

KHB7D0N65P1 - High Voltage MOSFETs

Download the KHB7D0N65P1 datasheet PDF (KHB7D0N65F1 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high voltage mosfets.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for active power factor correction and switching mode power supplies.

Features

  • VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ. )= 32nC K M L J D N N P H 1 2 3 DIM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KHB7D0N65F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB7D0N65P1
Manufacturer KEC
File Size 104.27 KB
Description High Voltage MOSFETs
Datasheet download datasheet KHB7D0N65P1 Datasheet

📁 Similar Datasheet

Other Datasheets by KEC semiconductor

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q I FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.
Published: |