KHB7D0N65P1, KHB7D0N65F1 Datasheet - KEC semiconductor

KHB7D0N65P1 High Voltage MOSFETs

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSI.

KHB7D0N65P1 Features

* VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.

KHB7D0N65F1_KECsemiconductor.pdf