SJMN11A60D Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.3Ω (Typ.)
- Ultra low gate charge: Qg=23nC (Typ.)
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code -. WW : Week Code
- Part: SJMN11A60D
- Manufacturer: Kodenshi AUK Group
- Size: 321.43 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN11A70I | N-Channel Super Junction MOSFET |
| SJMN11S60I | N-Channel Super Junction MOSFET |
| SJMN190R65B | N-Channel Super Junction MOSFET |
| SJMN190R65F | N-Channel Super Junction MOSFET |
| SJMN190R65F | Ultrafast Recovery Power Rectifier |
SJMN11A60D Description
SJMN11A60D Super Junction MOSFET N-Channel Super Junction MOSFET.