SJMN190R65B Datasheet, KODENSHI KOREA

SJMN190R65B mosfet equivalent, n-channel super junction mosfet.

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Features and benefits

* Drain-Source voltage: VDS=700V (@TJ=150C)
* Low drain-source On resistance: RDS(on)=0.19Ω (Max.)
* Ultra low gate charge: Qg=20nC(Typ.)
* RoHS complian.

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