SJMN190R65B Key Features
- Drain-Source voltage: VDS=700V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.19Ω (Max.)
- Ultra low gate charge: Qg=20nC(Typ.)
- RoHS pliant device
- 100% avalanche tested
- Part: SJMN190R65B
- Manufacturer: Kodenshi AUK Group
- Size: 579.30 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN190R65F | N-Channel Super Junction MOSFET |
| SJMN190R65F | Ultrafast Recovery Power Rectifier |
| SJMN11A60D | N-Channel Super Junction MOSFET |
| SJMN11A70I | N-Channel Super Junction MOSFET |
| SJMN11S60I | N-Channel Super Junction MOSFET |
SJMN190R65B Description
SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET.