Datasheet4U Logo Datasheet4U.com

2SB1182 - Medium Power Transistor

Features

  • Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse Collector power dissipation(Tc=25 ) Junction temperature Storage temperature Symbol VCBO VCEO VEB.

📥 Download Datasheet

📁 Similar Datasheet

  • 2SB1182 - Medium power Transistor (Rohm)
  • 2SB1182 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
  • 2SB1182 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2SB1182 - PNP PLASTIC ENCAPSULATE TRANSISTORS (Weitron)
  • 2SB1182 - PNP TRANSISTOR (UTC)
  • 2SB1182-P - PNP Transistor (MCC)
  • 2SB1182-Q - PNP Transistor (MCC)
  • 2SB1182-R - PNP Transistor (MCC)
  • 2SB1182D - PNP Transistor (SeCoS)
  • 2SB1182PT - PNP Transistor (Chenmko Enterprise)
Other Datasheets by Kexin

Full PDF Text Transcription

Click to expand full text
SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.
Published: |