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AO3407 - P-Channel MOSFET

Key Features

  • +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 +0.05 0.1 -0.01 +0.1 0.97 -0.1 1.Base 1. Gate 2.Emitter 2. Source S +0.1 0.38 -0.1 0-0.1 G 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Lead Junction Temperature Storage Temperature Range t ≤10s Steady State Ta = 25℃ Ta = 70℃ Symbol VDS VGS ID I.

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SMD Type P-Channel Enhancement MOSFET MOSFET IC AO3407 (KO3407) SOT-23 Unit: mm +0.1 2.4 -0.1 ID = -4.1 A RDS(ON) RDS(ON) 52m 87m (VGS = -10V) (VGS = -4.5V) D +0.1 1.3 -0.1 VDS (V) = -30V 1 +0.1 0.95 -0.1 +0.1 1.9 -0.1 2 0.55 0.4 Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 +0.05 0.1 -0.01 +0.1 0.97 -0.1 1.Base 1. Gate 2.Emitter 2. Source S +0.1 0.38 -0.1 0-0.1 G 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range t ≤10s Steady State Ta = 25℃ Ta = 70℃ Symbol VDS VGS ID IDM PD RthJA RthJL TJ Tstg Rating -30 ±20 -4.1 -3.