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Kexin

AO3407 Datasheet Preview

AO3407 Datasheet

P-Channel MOSFET

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SMD Type
P-Channel Enhancement MOSFET
AO3407 (KO3407)
MOSFEITC
Features
VDS (V) = -30V
ID = -4.1 A
RDS(ON) 52m
RDS(ON) 87m
(VGS = -10V)
(VGS = -4.5V)
D
G
S
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
Unit: mm
0.1 +0.05
-0.01
11.. BGasaete
22..ESmiotutrecre
33..cDolrlaeicntor
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta = 25
Ta = 70
Pulsed Drain Current
Power Dissipation
Ta = 25
Ta = 70
Thermal Resistance.Junction- to-Ambient t 10s
Steady State
Thermal Resistance.Junction- to-Lead
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RthJA
RthJL
TJ
Tstg
Rating
-30
±20
-4.1
-3.5
-20
1.4
1
90
125
60
150
-55 to 150
Unit
V
A
W
/W
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Kexin

AO3407 Datasheet Preview

AO3407 Datasheet

P-Channel MOSFET

No Preview Available !

SMD Type
MOSFEITC
P-Channel Enhancement MOSFET
AO3407 (KO3407)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
Min Typ Max Unit
ID=-250μA, VGS=0V
-30 V
VDS=-24V, VGS=0V
VDS=-24V, VGS=0V, TJ=55
-1
μA
-5
VDS=0V, VGS=±20V
±100 nA
VDS=VGS ID=-250μA
-1 -1.8 -3
V
VGS=-10V, ID=-4.1A
40.5 52
VGS=-10V, ID=-4.A TJ=125
57 73 mΩ
VGS=-4.5V, ID=-3A
64 87
VGS=-4.5V, VDS=-5V
-10 A
VDS=-5V, ID=-4A
5.5 8.2
S
700
VGS=0V, VDS=-15V, f=1MHz
120 pF
75
VGS=0V, VDS=0V, f=1MHz
10 Ω
14.3
VGS=-4.5V, VDS=-15V, ID=-4A
7 nC
3.1
8.6
VGS=-10V, VDS=-15V, RL=3.6Ω,RGEN=3Ω
5
28.2
ns
13.5
IF=-4A, dI/dt=100A/μs
27
15 nC
-2.2 A
IS=-1A,VGS=0V
-0.77 -1
V
Marking
Marking
A7*
2 www.kexin.com.cn


Part Number AO3407
Description P-Channel MOSFET
Maker Kexin
PDF Download

AO3407 Datasheet PDF






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