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KC808A-40 - PNP Silicon AF Transistors

Download the KC808A-40 datasheet PDF. This datasheet also covers the KC808A variant, as both devices belong to the same pnp silicon af transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • For general AF.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KC808A_GuangdongKexinIndustrial.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type www.DataSheet4U.com Transistors PNP Silicon AF Transistors KC808A(BC808A) Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Base current Total power dissipation Storage temperature Junction temperature Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Rating -30 -25 -5 -500 -1 -100 310 -65 to +150 150 Unit V V V mA A mA mW 0-0.1 +0.10.38 -0.1 1.Base 2.Emitter 3.