LN2302ALT1G Description
20V N-Channel Enhancement-Mode MOSFET.
LN2302ALT1G Key Features
- RDS(ON)≦85mΩ@VGS=4.5V
- RDS(ON)≦115mΩ@VGS=2.5V
- RDS(ON)≦135mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- S- Prefix for Automotive and Other
LN2302ALT1G Applications
- Power Management in Notebook