Datasheet Summary
LESHAN RADIO PANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
- APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance
Improved Shoot-Through FOM 2)We declare that the material of product pliant with RoHS requirements and Halogen Free
- Features
VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω
- DEVICE MARKING AND ORDERING INFORMATION
Device LN2302LT1G LN2302LT3G
Marking N02 N02
Shipping 3000/Tape&Reel 10000/Tape&Reel
- MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note1)
Maximum Power Dissipation
TA = 25°C TA = 75°C
Operating and Storage...