LN2308LT1G Description
60V N-Channel Enhancement-Mode MOSFET.
LN2308LT1G Key Features
- RDS(ON) ≦100mΩ@VGS=10V
- RDS(ON) ≦130mΩ@VGS=4.5V
- RDS(ON) ≦200mΩ@VGS=3.3V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
- S- Prefix for Automotive and Other
LN2308LT1G Applications
- Power Management in Note book