LN9926LT1G
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
Features
- RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
- High Density Cell Design for Ultra Low On-Resistance
- High Power and Current Handing Capability
- Fully Characterized Avalanche Voltage and Current
- Ideal for Li ion Battery Pack Applications
- We declare that the material of product pliance with
Ro HS requirements.
1 2 3
TSOP-6
6 5 4
4 Q2
6 Q1
Pin 1: Source 1 Pin 2: Drania 1 & 2
2 Pin 3: Source 2 Pin 4: Gate 2
1 Pin 5: Drania 1 & 2 Pin 6: Gate 1
Marking:
Applications
- Battery Protection
- Load Switch
- Power Management
9 2 6C
Pb Free Mark Pb-Free: " "(Note) Normal: None
Pin Style: 1.Source1 2.Drain1&2 3.Source2 4.Gate2 5.Drain1&2 6.Gate1
Material:
- Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
- Mold...
