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LN9926LT1G - Dual N-Channel Enhancement-Mode MOSFET

LRC

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Datasheet Details

Part number	LN9926LT1G
Manufacturer	LRC
File Size	413.90 KB
Description	Dual N-Channel Enhancement-Mode MOSFET
Datasheet	LN9926LT1G-LRC.pdf

LN9926LT1G Product details

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Features

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
High Density Cell Design for Ultra Low On-Resistance.
High Power and Current Handing Capability.
Fully Characterized Avalanche Voltage and Current.
Ideal for Li ion Battery Pack.

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Published: Oct 17, 2015 |