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LN9926LT1G - Dual N-Channel Enhancement-Mode MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process.

Key Features

  • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A.
  • High Density Cell Design for Ultra Low On-Resistance.
  • High Power and Current Handing Capability.
  • Fully Characterized Avalanche Voltage and Current.
  • Ideal for Li ion Battery Pack.

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Datasheet Details

Part number LN9926LT1G
Manufacturer LRC
File Size 413.90 KB
Description Dual N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LN9926LT1G Datasheet

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LN9926L 20V Dual N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) Features • RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power and Current Handing Capability • Fully Characterized Avalanche Voltage and Current • Ideal for Li ion Battery Pack Applications • We declare that the material of product compliance with RoHS requirements.