Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device
Ordering Information
Device
Marking
LP2301BLT1G
0B
Shipping 3000/Tape & Reel
LP2301BLT3G
0B
10,000/Tape & Reel
LP2301BLT1G
3
1 2
SOT.
Full PDF Text Transcription for LP2301BLT1G (Reference)
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LP2301BLT1G. For precise diagrams, and layout, please refer to the original PDF.
2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
LP2301BLT1G Datasheet
