LP2305DSLT1G Description
LP2305DSLT1G 12V P-Channel Enhancement-Mode MOSFET.
LP2305DSLT1G Key Features
- VDS = -12V
- RDS(ON), Vgs@-4.5V, Ids@-3.5A ≤ 68mΩ
- RDS(ON), Vgs@-2.5V, Ids@-3A ≤ 81mΩ
- RDS(ON), Vgs@-1.8V, Ids@-2.0A ≤ 118mΩ
- Advanced trench process technology
- High Density Cell Design For Ultra Low On-Resistance
- Fully Characterized Avalanche Voltage and Current
- Improved Shoot-Through FOM