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LP2307LT1G - 16V P-Channel Enhancement-Mode MOSFET

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT.
  • 23 (TO.
  • 236AB) D G S.

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Datasheet Details

Part number LP2307LT1G
Manufacturer LRC
File Size 278.26 KB
Description 16V P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LP2307LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.