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LP2307LT3G - 16V P-Channel Enhancement-Mode MOSFET

Download the LP2307LT3G datasheet PDF. This datasheet also covers the LP2307LT1G variant, as both devices belong to the same 16v p-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device LP2307LT1G 3 1 2 SOT.
  • 23 (TO.
  • 236AB) D G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LP2307LT1G-LRC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LP2307LT3G
Manufacturer LRC
File Size 278.26 KB
Description 16V P-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LP2307LT3G Datasheet

📁 Similar Datasheet

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LP230-25 POWER TRANSFORMER Superworld Electronics
LP230-50 POWER TRANSFORMER Superworld Electronics

Other Datasheets by LRC

Part Number Description
LP2307LT1G 16V P-Channel Enhancement-Mode MOSFET
LP2301ALT1G P-Channel MOSFET
LP2301BLT1G P-Channel MOSFET
LP2305DSLT1G P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS(ON), Vgs@-4.5V, Ids@-4.7A = 60 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.