LP2305DSLT1G mosfet equivalent, p-channel mosfet.
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we de.
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼.
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