L2SD1781KRLT3G transistor equivalent, medium power transistor.
1) Very low VCE(sat).
VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G
4) We declare that t.
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
3
1 2
SOT-23 /TO-236AB
FSt.
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