L2SD1781KRLT3G Features
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site
L2SD1781KRLT3G, L2SD1781KQLT3G Datasheet
Datasheet Details
L2SD1781KRLT3G, L2SD1781KQLT3G
Leshan Radio Company
109.83 KB
Medium power transistor.
This datasheet PDF includes multiple part numbers: L2SD1781KRLT3G, L2SD1781KQLT3G.
Please refer to the document for exact specifications by model.
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L2SD1781KRLT3G Distributor
