LMBT2222ALT1
LMBT2222ALT1 is General Purpose Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
General Purpose Transistors
NPN Silicon
- Pb- Free Package May be Available. The G- Suffix Denotes a
Pb- Free Lead Finish
LMBT2222LT1 LMBT2222ALT1
..
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V CEO V CBO V
2222 30 60 5.0 600
2222A 40 75 6.0 600
Unit Vdc Vdc Vdc m Adc
1 BASE 3 COLLECTOR
SOT- 23
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
2 EMITTER
RθJA PD
ORDERING INFORMATION
Device Package SOT- 23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel
RθJA TJ , Tstg
LMBT2222LT1
LMBT2222LT1G SOT- 23 LMBT2222ALT1 SOT- 23
DEVICE MARKING
LMBT2222LT1 = M1B; LMBT2222ALT1 = 1P
LMBT2222ALT1G SOT- 23
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (I C = 10 m Adc, I B = 0) Collector- Base Breakdown Voltage LMBT2222 LMBT2222A LMBT2222 V V I
(BR)CBO
(BR)CEO
30 40 60 75 5.0...
