LSIC1MO120E0080 Description
LSIC1MO120E0080 1200 V, 80 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Pinout Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1200 80 25 Unit V mOhm.
LSIC1MO120E0080 Key Features
- Optimized for high-frequency, high-efficiency