LSIC1MO120E0120 Description
LSIC1MO120E0120 LSIC1MO120E0120 1200 V, 120 mOhm N-Channel SiC MOSFET Silicon Carbide MOSFET Datasheet Agency Approvals and Environmental Environmental Approvals Circuit Diagram Product Summary Characteristic VDS Typical RDS(ON) ID (TC °C) Value 1200 120 18.
LSIC1MO120E0120 Key Features
- Optimized for high-frequency, high-efficiency