Datasheet4U Logo Datasheet4U.com

LPM9022 - Dual N -Channel Enhancement Power MOSFET

📥 Download Datasheet

Datasheet Details

Part number LPM9022
Manufacturer Lowpowersemi
File Size 454.73 KB
Description Dual N -Channel Enhancement Power MOSFET
Datasheet download datasheet LPM9022 Datasheet

General Description

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Overview

Preliminary Datasheet LPM9022 Dual N -Channel Enhancement Power MOSFET.

Key Features

  • Trench Technology.
  • Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
  • Super high density cell design.
  • Extremely Low Threshold Voltage.
  • Small package DFN-6L 2.
  • 3mm Order Information LPM9022.
  • F: Pb-Free Package Type QV: DFN-6L.

More Datasheets from Lowpowersemi

Part Number Description
LPM9021 Single P-Channel Power MOSFET
LPM9024 Dual N -Channel Enhancement Power MOSFET
LPM9029C N and P-Channel Enhancement Power MOSFET
LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor
LPM9017 P-Channel Enhancement Mode Field Effect Transistor
LPM9435 P-Channel Enhancement Mode Field Effect Transistor
LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor
LPM3413 P-Channel Enhancement Mode Field Effect Transistor
LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor
LPM4953 Dual P -Channel Enhancement Power MOSFET