LPM9029C
LPM9029C is manufactured by Lowpowersemi.
Preliminary Datasheet LPM9029C
N and P-Channel Enhancement Power MOSFET
General Description
The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free.
Order Information
LPM9022
- -
- F: Pb-Free
Package Type SO: SOP-8
Marking Information
Device
Marking
Package SOP-8
Shipping 3K/REEL
Features
- Trench Technology
- NMOS:
VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V
- PMOS: VPDS=-20V,...
