LPM9029C Description
The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit.
LPM9029C Key Features
- Trench Technology
- Super high density cell design
- Extremely Low Threshold Voltage
- Small package SOP-8