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LPM9029C - N and P-Channel Enhancement Power MOSFET

General Description

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V.
  • PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.5V.
  • Super high density cell design.
  • Extremely Low Threshold Voltage.
  • Small package SOP-8.

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Datasheet Details

Part number LPM9029C
Manufacturer Lowpowersemi
File Size 450.37 KB
Description N and P-Channel Enhancement Power MOSFET
Datasheet download datasheet LPM9029C Datasheet

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Full PDF Text Transcription (Reference)

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Preliminary Datasheet LPM9029C N and P-Channel Enhancement Power MOSFET General Description The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-free and Halogen-free. Order Information LPM9022 □ □ □ F: Pb-Free Package Type SO: SOP-8 Marking Information Device Marking LPM9029C Package SOP-8 Shipping 3K/REEL Features  Trench Technology  NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V  PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.