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LPM9029C - N and P-Channel Enhancement Power MOSFET

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LPM9029C N and P-Channel Enhancement Power MOSFET by Lowpowersemi - Datasheet Preview — Datasheet preview – LPM9029C

Datasheet Details

Part number	LPM9029C
Manufacturer	Lowpowersemi
File Size	450.37 KB
Description	N and P-Channel Enhancement Power MOSFET
Datasheet	LPM9029C Datasheet
Additional preview pages of the LPM9029C datasheet.

LPM9029C Product details

Description

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Features

Trench Technology.
NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V.
PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.5V.
Super high density cell design.
Extremely Low Threshold Voltage.
Small package SOP-8.

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Published: Sep 14, 2018 |