LPM9007 Description
The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook puter power management and other battery powered circuits where it is high-side switching.
LPM9007 Key Features
- 30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V
- 30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V
- Super high density cell design for extremely low
- SOT23 Package