LPM9007 Datasheet | Lowpowersemi

Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook puter power management and other battery powered circuits where it is high-side switching. Order Information - - - F: Pb-Free Package Type B3: SOT23-3 Features - -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V - - -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V - - Super high density...