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LPM9007 - 30V/4A P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/-3.0A, RDC(ON)=52mΩ(typ. )@VGS=-4.5V.
  • -30V/-3.0A,RDC(ON)=80mΩ(typ. )@VGS=-2.5V.
  • Super high density cell design for extremely low RDC(ON).
  • SOT23 Package.

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Datasheet Details

Part number LPM9007
Manufacturer Lowpowersemi
File Size 665.61 KB
Description 30V/4A P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM9007 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching. Order Information LPM9007 □ □ □ F: Pb-Free Package Type B3: SOT23-3 Features  -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V  ■ -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.