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LPM9007 - 30V/4A P-Channel Enhancement Mode Field Effect Transistor

Product Overview

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LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor by Lowpowersemi - Datasheet Preview — Datasheet preview – LPM9007

Datasheet Details

Part number	LPM9007
Manufacturer	Lowpowersemi
File Size	665.61 KB
Description	30V/4A P-Channel Enhancement Mode Field Effect Transistor
Datasheet	LPM9007 Datasheet
Additional preview pages of the LPM9007 datasheet.

LPM9007 Product details

Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

-30V/-3.0A, RDC(ON)=52mΩ(typ. )@VGS=-4.5V.
-30V/-3.0A,RDC(ON)=80mΩ(typ. )@VGS=-2.5V.
Super high density cell design for extremely low RDC(ON).
SOT23 Package.

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Published: Sep 14, 2018 |