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LPM9022 - Dual N -Channel Enhancement Power MOSFET

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LPM9022 Dual N -Channel Enhancement Power MOSFET by Lowpowersemi - Datasheet Preview — Datasheet preview – LPM9022

Datasheet Details

Part number	LPM9022
Manufacturer	Lowpowersemi
File Size	454.73 KB
Description	Dual N -Channel Enhancement Power MOSFET
Datasheet	LPM9022 Datasheet
Additional preview pages of the LPM9022 datasheet.

LPM9022 Product details

Description

The LPM9022 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Features

Trench Technology.
Single NMOS: VDS=20V, ID=6A RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V.
Super high density cell design.
Extremely Low Threshold Voltage.
Small package DFN-6L 2.
3mm Order Information LPM9022.
F: Pb-Free Package Type QV: DFN-6L.

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Published: Sep 14, 2018 |