LPM9022 Description
The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit.
LPM9022 Key Features
- Trench Technology
- Single NMOS: VDS=20V, ID=6A
- Super high density cell design
- Extremely Low Threshold Voltage
- Small package DFN-6L 2-3mm