LPM9022
LPM9022 is manufactured by Lowpowersemi.
Preliminary Datasheet LPM9022
Dual N -Channel Enhancement Power MOSFET
General Description
The LPM9022 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9022 is Pb-free and Halogen-free.
Features
- Trench Technology
- Single NMOS: VDS=20V, ID=6A
RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V
- Super high density cell design
- Extremely Low Threshold Voltage
- Small package DFN-6L 2- 3mm
Order Information
- -
- F: Pb-Free
Package Type QV: DFN-6L
Applications
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