LPM9017 Datasheet | Lowpowersemi

Preliminary Datasheet - -30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching. Ordering Information LPM9017- - - - F: Pb-Free Package Type B3: SOT23 Features - -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V - -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V - Super high density...