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LPM9017 - P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -30V/-4A,RDS(ON)＜58mΩ(typ. )@VGS=-10V.
  • -30V/-3.0A,RDS(ON)＜68mΩ(typ. )@VGS=-4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • SOT23 Package.

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Datasheet Details

Part number LPM9017
Manufacturer Lowpowersemi
File Size 787.15 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM9017 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM9017 LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Ordering Information LPM9017- □ □ □ F: Pb-Free Package Type B3: SOT23 Features ■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V ■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.