LPM9017 Description
The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
LPM9017 Key Features
- 30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
- 30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
- Super high density cell design for extremely
- SOT23 Package