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LPM9024 - Dual N -Channel Enhancement Power MOSFET

General Description

The LPM9024 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Key Features

  • Trench Technology.
  • Single NMOS: VDS=20V RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A.
  • Super high density cell design.
  • Extremely Low Threshold Voltage.
  • Small package DFN-6L 2.
  • 2mm Order Information LPM9022.
  • F: Pb-Free Package Type QV: DFN-6L.

📥 Download Datasheet

Datasheet Details

Part number LPM9024
Manufacturer Lowpowersemi
File Size 477.05 KB
Description Dual N -Channel Enhancement Power MOSFET
Datasheet download datasheet LPM9024 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet LPM9024 Dual N -Channel Enhancement Power MOSFET General Description The LPM9024 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9024 is Pb-free and Halogen-free. Features  Trench Technology  Single NMOS: VDS=20V RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A  Super high density cell design  Extremely Low Threshold Voltage  Small package DFN-6L 2*2mm Order Information LPM9022 □ □ □ F: Pb-Free Package Type QV: DFN-6L Applications  Driver for Relay, Solenoid, Motor, LED etc.