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LPM9024 - Dual N -Channel Enhancement Power MOSFET

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LPM9024 Dual N -Channel Enhancement Power MOSFET by Lowpowersemi - Datasheet Preview — Datasheet preview – LPM9024

Datasheet Details

Part number	LPM9024
Manufacturer	Lowpowersemi
File Size	477.05 KB
Description	Dual N -Channel Enhancement Power MOSFET
Datasheet	LPM9024 Datasheet
Additional preview pages of the LPM9024 datasheet.

LPM9024 Product details

Description

The LPM9024 integrates two N-Channel enhancement MOSFET Transistor.

It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for using in DC-DC conversion, power switch and charging circuit.

Features

Trench Technology.
Single NMOS: VDS=20V RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A.
Super high density cell design.
Extremely Low Threshold Voltage.
Small package DFN-6L 2.
2mm Order Information LPM9022.
F: Pb-Free Package Type QV: DFN-6L.

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Published: Sep 14, 2018 |