LPM9024 mosfet equivalent, dual n -channel enhancement power mosfet.
* Trench Technology
* Single NMOS: VDS=20V
RDS(ON) < 40mΩ @ VGS=2.5V, ID=5A RDS(ON) < 30mΩ @ VGS=4.5V, ID=5A
* Super high density cell design
* Extremely .
* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
The LPM9024 integrates two N-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circ.
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