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2N3700 Datasheet Preview

2N3700 Datasheet

NPN Low Power Silicon Transistor

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2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Features
JANS Qualified to MIL-PRF-19500/391
2N3700 & 2N3700UB available in JANSR
JEDEC registered 2N3700, 2N3057
Lightweight & Low Power
Ideal for Space, Military, & other High Reliability
Applications
TO-18 (TO-206AA), TO-46 (TO-206AB) Surface
Mount UB Package Styles Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Test Conditions
IC = 30 mA
VBC = 140 V
VEB = 7 V
VCE = 90 V
VEB = 5 Vdc
IC = 150 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
Symbol Units Min.
Max.
V(BR)CEO V
ICBO
µA
IEBO1
ICES
IEBO2
µA
nA
nA
80
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
100
90
50
15
10
10
10
10
300
300
0.2
0.5
1.1
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 A, VCE = 5 V, f = 1 kHz
HFE
80 400
Magnitude ofSmall-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
VCB = 0.5 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 10 ms
VCE = 10 V, IC = 180 mA
VCE = 40 V, IC = 50 mA
VCE = 80 V, IC = 15 mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
| HFE |
COBO
CIBO
pF
5
20
12
60
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




MA-COM

2N3700 Datasheet Preview

2N3700 Datasheet

NPN Low Power Silicon Transistor

No Preview Available !

2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Absolute Maximum Ratings
Ratings
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25°C2
@ TC = 25°C3
Operating & Storage Temperature Range
2. Derate linearly @ 2.85 mW / °C for TA = 25 °C
3. Derate linearly @ 10.3 mW / °C for TC = 25 °C
Symbol
VCEO
VCBO
VEBO
IC
PT
TOP, TSTG
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJA
Rev. V1
Value
80 V
140 V
7V
1A
0.5 W
1.0 W
-65°C to +200°C
Max. Value
150°C/W
325°C/W
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support


Part Number 2N3700
Description NPN Low Power Silicon Transistor
Maker MA-COM
PDF Download

2N3700 Datasheet PDF






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