2N3057A, 2N3700, 2N3700UB
NPN Low Power Silicon Transistor
Features
JANS Qualified to MIL-PRF-19500/391
2N3700 & 2N3700UB available in JANSR
JEDEC registered 2N3700, 2N3057
Lightweight & Low Power
Ideal for Space, Military, & other High Reliability
Applications
TO-18 (TO-206AA), TO-46 (TO-206AB) Surface
Mount UB Package Styles Package
Rev. V1
Electrical Characteristics
Parameter
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Dynamic Characteristics
Test Conditions
IC = 30 mA
VBC = 140 V
VEB = 7 V
VCE = 90 V
VEB = 5 Vdc
IC = 150 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
IC = 150 mA, IB = 15 mA
Symbol Units Min.
Max.
V(BR)CEO V
ICBO
µA
IEBO1
ICES
IEBO2
µA
nA
nA
80
—
—
—
—
HFE -
VCE(SAT) Vdc
VBE(SAT) Vdc
100
90
50
15
—
—
—
10
10
10
10
300
—
300
—
0.2
0.5
1.1
Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1 A, VCE = 5 V, f = 1 kHz
HFE
80 400
Magnitude ofSmall-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, f = 20 MHz
Output Capacitance
VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
VCB = 0.5 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 10 ms
VCE = 10 V, IC = 180 mA
VCE = 40 V, IC = 50 mA
VCE = 80 V, IC = 15 mA
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2%.
| HFE |
COBO
CIBO
pF
5
—
20
12
60
1
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