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MAGX-000025-150000 - Power Transistor

Download the MAGX-000025-150000 datasheet PDF (MAGX-000025-150000-MA included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power transistor.

Description

The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications.

Features

  • GaN on SiC Transistor Technology.
  • Broadband Unmatched Transistor.
  • Common-Source Configuration.
  • +50 V Typical Operation.
  • Class AB Operation.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.
  • MTTF = 600 years (TJ < 200 °C).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000025-150000-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  Common-Source Configuration  +50 V Typical Operation  Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  MTTF = 600 years (TJ < 200 °C) Applications  General purpose for pulsed or CW applications Description The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs.
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