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MAGX-000035-01500S - Power Transistor

This page provides the datasheet information for the MAGX-000035-01500S, a member of the MAGX-000035-015000-MA Power Transistor family.

Description

The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.

Features

  •  GaN on SiC Depletion Mode Transistor.
  •  Common-Source Configuration.
  •  Broadband Class AB Operation.
  •  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu).
  •  RoHS.
  • Compliant.
  •  +50V Typical Operation.
  •  MTTF = 600 years (TJ < 200°C) Primary.

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Datasheet preview – MAGX-000035-01500S

Datasheet Details

Part number MAGX-000035-01500S
Manufacturer MA-COM
File Size 763.50 KB
Description Power Transistor
Datasheet download datasheet MAGX-000035-01500S Datasheet
Additional preview pages of the MAGX-000035-01500S datasheet.

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Full PDF Text Transcription

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MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Features  GaN on SiC Depletion Mode Transistor  Common-Source Configuration  Broadband Class AB Operation  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu)  RoHS* Compliant  +50V Typical Operation  MTTF = 600 years (TJ < 200°C) Primary Applications  Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX)  Air Traffic Control Radar - Commercial  Weather Radar - Commercial  Military Radar - Military  Public Radio  Industrial, Scientific and Medical  SATCOM  Instrumentation Description The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.
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