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MAGX-000025-150000 - Power Transistor

Download the MAGX-000025-150000 datasheet PDF. This datasheet also covers the MAGX-000025-150000-MA variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications.

Key Features

  • GaN on SiC Transistor Technology.
  • Broadband Unmatched Transistor.
  • Common-Source Configuration.
  • +50 V Typical Operation.
  • Class AB Operation.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.
  • MTTF = 600 years (TJ < 200 °C).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000025-150000-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  Common-Source Configuration  +50 V Typical Operation  Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  MTTF = 600 years (TJ < 200 °C) Applications  General purpose for pulsed or CW applications Description The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs.