MAGX-000025-150000 Overview
The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable...
MAGX-000025-150000 Key Features
- GaN on SiC Transistor Technology
- Broadband Unmatched Transistor
- mon-Source Configuration
- +50 V Typical Operation
- Class AB Operation
- RoHS- pliant and 260°C Reflow patible
- MTTF = 600 years (TJ < 200 °C)