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MAGX-000025-150000 - Power Transistor

This page provides the datasheet information for the MAGX-000025-150000, a member of the MAGX-000025-150000-MA Power Transistor family.

Description

The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications.

Features

  • GaN on SiC Transistor Technology.
  • Broadband Unmatched Transistor.
  • Common-Source Configuration.
  • +50 V Typical Operation.
  • Class AB Operation.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.
  • MTTF = 600 years (TJ < 200 °C).

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Datasheet preview – MAGX-000025-150000

Datasheet Details

Part number MAGX-000025-150000
Manufacturer MA-COM
File Size 1.15 MB
Description Power Transistor
Datasheet download datasheet MAGX-000025-150000 Datasheet
Additional preview pages of the MAGX-000025-150000 datasheet.

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Full PDF Text Transcription

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MAGX-000025-150000 GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz Features  GaN on SiC Transistor Technology  Broadband Unmatched Transistor  Common-Source Configuration  +50 V Typical Operation  Class AB Operation  RoHS* Compliant and 260°C Reflow Compatible  MTTF = 600 years (TJ < 200 °C) Applications  General purpose for pulsed or CW applications Description The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs.
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