MAGX-000025-150000 Key Features
- GaN on SiC Transistor Technology
- Broadband Unmatched Transistor
- mon-Source Configuration
- +50 V Typical Operation
- Class AB Operation
- RoHS- pliant and 260°C Reflow patible
- MTTF = 600 years (TJ < 200 °C)
- Part: MAGX-000025-150000
- Manufacturer: MACOM Technology Solutions
- Size: 1.15 MB
Related MACOM Technology Solutions Datasheets
| Part Number | Description |
|---|---|
| MAGX-000035-010000 | Power Transistor |
| MAGX-000035-01000P | Pulsed Transistor |
| MAGX-000035-01000S | Power Transistor |
| MAGX-000035-015000 | Power Transistor |
| MAGX-000035-01500S | Power Transistor |
MAGX-000025-150000 Description
The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable...