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MAGX-000035-010000 - Power Transistor

This page provides the datasheet information for the MAGX-000035-010000, a member of the MAGX-000035-010000-MA Power Transistor family.

Description

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.

Features

  •  GaN Depletion-Mode HEMT Microwave Transistor.
  •  Common-Source configuration.
  •  No internal matching.
  •  Broadband Class AB operation.
  •  RoHS.
  • Compliant.
  •  +50 V Typical Operation.
  •  MTTF = 600 years.

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Datasheet preview – MAGX-000035-010000

Datasheet Details

Part number MAGX-000035-010000
Manufacturer MA-COM
File Size 585.07 KB
Description Power Transistor
Datasheet download datasheet MAGX-000035-010000 Datasheet
Additional preview pages of the MAGX-000035-010000 datasheet.

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Full PDF Text Transcription

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MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features  GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching  Broadband Class AB operation  RoHS* Compliant  +50 V Typical Operation  MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.
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