Datasheet4U Logo Datasheet4U.com

MAGX-000035-010000 - Power Transistor

Download the MAGX-000035-010000 datasheet PDF. This datasheet also covers the MAGX-000035-010000-MA variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.

Key Features

  •  GaN Depletion-Mode HEMT Microwave Transistor.
  •  Common-Source configuration.
  •  No internal matching.
  •  Broadband Class AB operation.
  •  RoHS.
  • Compliant.
  •  +50 V Typical Operation.
  •  MTTF = 600 years.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000035-010000-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features  GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching  Broadband Class AB operation  RoHS* Compliant  +50 V Typical Operation  MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.