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MAGX-000035-01000P - Pulsed Transistor

Download the MAGX-000035-01000P datasheet PDF. This datasheet also covers the MAGX-000035-01000P-MA variant, as both devices belong to the same pulsed transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Key Features

  • GaN on SiC D-Mode Transistor Technology.
  • Unmatched, Ideal for Pulsed / CW.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000035-01000P-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MAGX-000035-010000 Power Transistor
MAGX-000035-01000S Power Transistor
MAGX-000035-015000 Power Transistor
MAGX-000035-01500S Power Transistor
MAGX-000025-150000 Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAGX-000035-01000P GaN Wideband 10 W CW / Pulsed Transistor in Plastic Package DC - 3.5 GHz Rev. V2 Features  GaN on SiC D-Mode Transistor Technology  Unmatched, Ideal for Pulsed / CW Applications  50 V Typical Bias, Class AB  Common-Source Configuration  Thermally-Enhanced 3 x 6 mm 14-Lead DFN  MTTF = 600 years (TJ < 200°C)  Halogen-Free “Green” Mold Compound  RoHS* Compliant and 260°C Reflow Compatible  MSL-1 Description The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C.