MAGX-000035-01000P Overview
The MAGX-000035-01000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an...
MAGX-000035-01000P Key Features
- GaN on SiC D-Mode Transistor Technology
- Unmatched, Ideal for Pulsed / CW