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MAGX-000035-015000 - Power Transistor

Download the MAGX-000035-015000 datasheet PDF. This datasheet also covers the MAGX-000035-015000-MA variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.

Key Features

  •  GaN on SiC Depletion Mode Transistor.
  •  Common-Source Configuration.
  •  Broadband Class AB Operation.
  •  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu).
  •  RoHS.
  • Compliant.
  •  +50V Typical Operation.
  •  MTTF = 600 years (TJ < 200°C) Primary.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAGX-000035-015000-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Features  GaN on SiC Depletion Mode Transistor  Common-Source Configuration  Broadband Class AB Operation  Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu)  RoHS* Compliant  +50V Typical Operation  MTTF = 600 years (TJ < 200°C) Primary Applications  Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX)  Air Traffic Control Radar - Commercial  Weather Radar - Commercial  Military Radar - Military  Public Radio  Industrial, Scientific and Medical  SATCOM  Instrumentation Description The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.