Download the MAGX-000035-010000 datasheet PDF.
This datasheet also covers the MAGX-000035-010000-MA variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.
Full PDF Text Transcription for MAGX-000035-010000 (Reference)
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MAGX-000035-010000. For precise diagrams, and layout, please refer to the original PDF.
MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features GaN Depletion-Mode HEMT Microwave Transistor Common-Source ...
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ures GaN Depletion-Mode HEMT Microwave Transistor Common-Source configuration No internal matching Broadband Class AB operation RoHS* Compliant +50 V Typical Operation MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.
MAGX-000035-010000 Datasheet
