CMPA0060025D Datasheet | MACOM Technology Solutions

Description The CMPA0060025D is a gallium nitride (Ga N) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). Ga N has superior properties pared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. Ga N HEMTs also offer greater power density and wider bandwidths pared to Si and Ga As transistors. This MMIC enables very wide bandwidths. PN: CMPA0060025D Typical Performance Over 1.0-6.0 GHz (TC = 25ºC) Parameter Gain Output Power @ PIN 32 d Bm Associated Gain @ PIN 32 d Bm PAE @ PIN 32 d Bm 1.0 GHz 18.0 34 13.3 54 2.0 GHz 18.0 38 13.9 45 3.0 GHz 18.5 42 14.2 46 Note: VDD = 50 V, ID = 500 m A 4.0 GHz 18.0 29 12.6 33 5.0 GHz 17.0 30 13.1 34 6.0 GHz 17.0 31 12.9 33 Units d B W d B % Features - 18 d B Small Signal Gain - 30 W Typical PSAT - Operation up to 50 V - High Breakdown Voltage - High Temperature Operation - Size 0.157 x 0.094 x 0.004 inches Applications - Ultra Broadband Amplifiers - Test Instrumentation - EMC Amplifier Drivers 1 MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: Rev. 2.3, 2022-12-13 https://.ma./support Absolute Maximum Ratings (not simultaneous) at 25ºC Parameter Drain-source Voltage Gate-source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Thermal Resistance, Junction to Case (packaged)1 Thermal Resistance (die only)1 Input Power2 Symbol VDSS VGS TSTG TJ IGMAX RθJC Notes: 1 Eutectic die attach using 80/20 Au Sn solder mounted to a 10 mil thick Cu Mo carrier 2 Limit for internal resistor only. Thermal dissipation may be exceeded at this level Rating 84 -10, +2 -65, +150 225 12 2.32 1.40 36 Units ºC m A ºC/W d...