CMPA0060025D
Overview
The CMPA0060025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
- 18 dB Small Signal Gain
- 30 W Typical PSAT
- Operation up to 50 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.157 x 0.094 x 0.004 inches
